Interband cascade lasers

C.H. Thompson Lin; WenYen Hwang; Han Q. Le; Yao-Ming Mu; A. Liu; Jun Zheng; A. M. Delaney; Chau-Hong Kuo; Shin Shem Pei

doi:10.1117/12.382089

18 April 2000 Interband cascade lasers

C.H. Thompson Lin, WenYen Hwang, Han Q. Le, Yao-Ming Mu, A. Liu, Jun Zheng, A. M. Delaney, Chau-Hong Kuo, Shin Shem Pei

Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382089
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We report the recent progress of interband cascade (IC) lasers based on InAs/Ga(In)Sb/AlSb type-II quantum wells. For the 4.5-micrometers IC lasers, the internal loss was 11.6 cm^-1 and the internal quantum efficiency was 460% at 90 K. When mounted epi-side down on diamond, cw operation was observed with an external quantum efficiency (EQE) of 193%, a cw output power over 500 mW, and a threshold current density as low as 35 A/cm² at 80 K. Dual-wavelength IC laser was also demonstrated. The device lased simultaneously at 4.482 and 4.568 micrometers . At 110 K, a peak output power of 150 mW per facet was achieved with 5-microsecond(s) pulses at 1-KHz repetition rate. The threshold current density, average EQE, and peak output power of a 0.4-mm long device were 119 A/cm², 278%, and 150 mW per facet, respectively.

Citation Download Citation

C.H. Thompson Lin, WenYen Hwang, Han Q. Le, Yao-Ming Mu, A. Liu, Jun Zheng, A. M. Delaney, Chau-Hong Kuo, and Shin Shem Pei "Interband cascade lasers", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382089

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