Paper
14 June 2000 Model for rate-dependent hysteresis in piezoceramic materials operating at low frequencies
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Abstract
This paper addresses the modeling of certain rate-dependent mechanisms which contribute to hysteresis inherent to piezoelectric materials operating at low frequencies. While quasistatic models are suitable for initial materials characterization in some applications, the reduction in coercive field and polarization values which occur as frequencies increase must be accommodated to attain the full capabilities of the materials. The model employed here quantifies the hysteresis in two steps. In the first, anhysteretic polarization switching is modeled through the application of Boltzmann principles to balance the electrostatic and thermal energy. Hysteresis is then incorporated through the quantification of energy required to translate and bend domain walls pinned at inclusions inherent to the materials. The performance of the model is illustrated through a fit to low frequency data from a PZT5A wafer.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph C. Smith, Zoubeida Ounaies, and Robert Wieman "Model for rate-dependent hysteresis in piezoceramic materials operating at low frequencies", Proc. SPIE 3992, Smart Structures and Materials 2000: Active Materials: Behavior and Mechanics, (14 June 2000); https://doi.org/10.1117/12.388195
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Cited by 15 scholarly publications.
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KEYWORDS
Polarization

Data modeling

Performance modeling

Semiconducting wafers

Switches

Thermal modeling

Ferroelectric materials

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