Paper
5 July 2000 Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performance
Chul-Hong Park, Sang-Uhk Rhie, Ji-Hyeon Choi, Ji-Soong Park, Hyeong-Weon Seo, Yoo-Hyon Kim, Young-Kwan Park, Woo-Sung Han, Won-Seong Lee, Jeong-Taek Kong
Author Affiliations +
Abstract
A practical optical proximity correction (OPC) method is introduced and applied to 0.25 micrometers DRAM process in order to reduce the gate critical dimension (CD) variations across the exposure field. A variable threshold model is made and evaluated to enhance the model accuracy. This model takes maximum 2X computation time compared with the constant threshold model. The proposed OPC methodology considering both process effects and mask manufacturability simultaneously is discussed in view of the gate line CD variation. The correction segments of a pattern are optimized considering mask manufacturability. Patterns with jog sizes larger than 0.4 micrometers are inspect able with KLA35UV. The OPC results exhibited 60 percent reduction of gate CD variation, 90 percent matching of mean-to-target CD, and 15 percent improvement of circuit performance.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chul-Hong Park, Sang-Uhk Rhie, Ji-Hyeon Choi, Ji-Soong Park, Hyeong-Weon Seo, Yoo-Hyon Kim, Young-Kwan Park, Woo-Sung Han, Won-Seong Lee, and Jeong-Taek Kong "Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performance", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388939
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Cited by 3 scholarly publications.
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KEYWORDS
Optical proximity correction

Critical dimension metrology

Photomasks

Inspection

Manufacturing

Etching

Data corrections

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