Current status of 157-nm mask technology development

Giang T. Dao; Ronald Kuse; Kevin J. Orvek; Eric M. Panning; Roswitha Remling; Jun-Fei Zheng; Munehiko Tsubosaki; Fu-Chang Lo

doi:10.1117/12.392091

19 July 2000 Current status of 157-nm mask technology development

Giang T. Dao, Ronald Kuse, Kevin J. Orvek, Eric M. Panning, Roswitha Remling, Jun-Fei Zheng, Munehiko Tsubosaki, Fu-Chang Lo

Author Affiliations +

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392091
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

157-nm lithography has gained significant momentum and worldwide support as the post-193 nm technology. Due to higher absorption at shorter wavelength, however, there are several critical issues including materials and reticle handling at 157-nm. These key technical areas are being studied at Intel in collaboration with worldwide industrial and academic partners. In this paper, we will report the progress on 157-nm specific mask technology development.

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Giang T. Dao, Ronald Kuse, Kevin J. Orvek, Eric M. Panning, Roswitha Remling, Jun-Fei Zheng, Munehiko Tsubosaki, and Fu-Chang Lo "Current status of 157-nm mask technology development", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392091

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