Properties of gallium phosphide films prepared by rf magnetron sputtering

Jianquan Song; Zhengtang Liu; Dagang Guo; Zhongqi Yu; Dongsheng Geng; Xiulin Zheng

doi:10.1117/12.408399

29 November 2000 Properties of gallium phosphide films prepared by rf magnetron sputtering

Jianquan Song, Zhengtang Liu, Dagang Guo, Zhongqi Yu, Dongsheng Geng, Xiulin Zheng

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408399
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

As a coating material with excellent durability in 8 - 12 micrometers waveband, GaP films can be used as anti-reflective and protective layers on the windows and domes of ZnS, ZnSe and Ge. In this paper GaP films have been deposited by radio frequency magnetron sputtering of single crystalline gallium phosphide. The deposition rate, composition, structure, hardness and optical properties of GaP films have been investigated, and it's application used as anti-reflective and protective films on ZnS substrate has also been studied.

Citation Download Citation

Jianquan Song, Zhengtang Liu, Dagang Guo, Zhongqi Yu, Dongsheng Geng, and Xiulin Zheng "Properties of gallium phosphide films prepared by rf magnetron sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408399

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