Resistance degradation in early stage of electromigration of Al(Cu) metal lines

Qiang Guo; Keng Foo Lo; Indrajit Manna; Xu Zeng; Bin Bin Jie

doi:10.1117/12.404878

23 October 2000 Resistance degradation in early stage of electromigration of Al(Cu) metal lines

Qiang Guo, Keng Foo Lo, Indrajit Manna, Xu Zeng, Bin Bin Jie

Proceedings Volume 4229, Microelectronic Yield, Reliability, and Advanced Packaging; (2000) https://doi.org/10.1117/12.404878
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Resistance degradation in the early stage of electro migration of Al(Cu) metal lines has been investigated by using high resolution resistance measurement. The resistance variation due to Cu diffusion along the line was separated form that due to the thermal stress in the electro migration test. It was found that Cu diffusion along the line strongly depends on the metal line structure. In a wide line with polycrystalline structure, the resistance drop due to Cu diffusion is linearly increased with the test time. However, as the linewidth is reduced and the line becomes bamboo structure, most of resistance drop is ascribed to the thermal stress and Cu diffusion along the line is almost negligible. This finding indicates that the role of Cu in the electro migration reliability strongly depends on the line structure, and previous theory on the role of Cu in improvement of electro migration reliability can not simply apply to the metal line with bamboo structure.

Citation Download Citation

Qiang Guo, Keng Foo Lo, Indrajit Manna, Xu Zeng, and Bin Bin Jie "Resistance degradation in early stage of electromigration of Al(Cu) metal lines", Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); https://doi.org/10.1117/12.404878

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