Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers

Shekhar Guha; James L. Blackshire; Andrew Zakel; Srinivasan Krishnamurthy

doi:10.1117/12.429421

12 June 2001 Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers

Shekhar Guha, James L. Blackshire, Andrew Zakel, Srinivasan Krishnamurthy

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429421
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Accurate knowledge of the decay rates of optically generated charge carriers in bulk semiconductor materials is important for various infrared applications. Most of the published decay rates of free carriers generated with above band-gap energy light, in materials such as InAs and InSb are obtained from measurements in thin films. Stronger attenuation of above band gap energy light in these materials prevents the probing in samples thicker than a few microns. To study the decay of free carriers in the bulk semiconductor wafers, we use two-photon absorption of below band gap energy light (obtained from a pulsed CO₂ laser). This method generated charge carriers throughout the bulk of the material used (typically having thickness of 1 - 2 mm). The decay of the charge carriers is then probed with a low power cw infrared laser (also with photon energy below the band gap). The decay rates measured at different temperatures are compared with calculations that include Auger and defect-assisted Shockley-Reed-Hall (SRH) recombination processes. Calculation of various recombination processes indicate that the lifetimes are limited by SRH mechanism in InAs samples.

Citation Download Citation

Shekhar Guha, James L. Blackshire, Andrew Zakel, and Srinivasan Krishnamurthy "Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429421

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