Paper
12 June 2001 Uncooled infrared detector technology from research to production within six months
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Abstract
During the last 4 years, an infrared technology based on amorphous silicon has been developed by the Infrared Laboratory (Leti-Lir) in France. After having made a first demonstrator of 256 X 64 pixels, Lir and Sofradir have decided to develop a larger format of 320 X 240 on an industrial basis which needed of course a transfer of technology and a real production line installation. All this work has been done and after a 6 month transfer of technology the production line is running at Sofradir. The purpose of this paper is to present our special connection between research and production and to update the results from a production point of view.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Pierre Chatard and Philippe M. Tribolet "Uncooled infrared detector technology from research to production within six months", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429398
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KEYWORDS
Microbolometers

Sensors

Infrared detectors

Resistance

Amorphous silicon

CMOS technology

Detector development

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