Excimer-laser-crystallized poly-Si thin film transistors

Dharam Pal Gosain

doi:10.1117/12.424866

30 April 2001 Excimer-laser-crystallized poly-Si thin film transistors

Dharam Pal Gosain

Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424866
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States

Abstract

Changing the TFT backplate from a glass to a plastic substrate will reduce the weight of a Flat Panel Display (FPD), but transparent plastic substrates are generally only temperature-resistant up to 125 degrees C. We have focused therefore on reducing the maximum processing temperature to 110 degrees C. Sputtered a-Si films are more suitable for laser crystallization on plastic, because they contain no hydrogen and can be crystallized by an excimer laser even if deposited at room temperature. We report high-quality poly- Si obtained by pulse laser crystallization on a plastic substrate coated with a buffer layer. A doping technique for source and drain compatible with a low temperature wide area substrate, based on excimer laser annealing, has been developed. The results of UV reflectivity, SEM, TEM, AFM, and Raman spectroscopy studies are summarized. Self-aligned top-gate TFTs fabricated on a plastic substrate at a substrate temperature of 110 degrees C are reported. Transistor field effect mobility of 250 cm²/V.s and a sub-threshold swing of 0.16 V/decade have been reported. Work on TFT s fabricate don plastic substrates is summarized.

Citation Download Citation

Dharam Pal Gosain "Excimer-laser-crystallized poly-Si thin film transistors", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424866

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