Paper
20 August 2001 Laser-produced plasma (LPP) scale-up and commercialization
Richard H. Moyer, Harry Shields, Armando Martos, Steven W. Fornaca, Randall J. St. Pierre, Michael B. Petach
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Abstract
An EUV light source, created when a high-average power (750 W) Nd:YAG laser forms a plasma in a xenon liquid-spray jet, has been characterized. This source has shown improved conversion from laser to EUV, and a more uniform angular distribution, as the laser pulse energy and average power are increased. System performance has been analyzed and compared with the requirements for future EUV microlithography tools for semiconductor manufacturing. EUV power scaling requirements and factors influencing Cost-of-Ownership are discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard H. Moyer, Harry Shields, Armando Martos, Steven W. Fornaca, Randall J. St. Pierre, and Michael B. Petach "Laser-produced plasma (LPP) scale-up and commercialization", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436654
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Cited by 12 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Xenon

Pulsed laser operation

Plasma

Mirrors

Laser energy

Semiconducting wafers

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