Progress in placement control for ion beam stencil mask technology

Frank-Michael Kamm; Albrecht Ehrmann; Thomas Struck; Karl Kragler; Joerg Butschke; Florian Letzkus; Reinhard Springer; Ernst Haugeneder

doi:10.1117/12.436673

20 August 2001 Progress in placement control for ion beam stencil mask technology

Frank-Michael Kamm, Albrecht Ehrmann, Thomas Struck, Karl Kragler, Joerg Butschke, Florian Letzkus, Reinhard Springer, Ernst Haugeneder

Author Affiliations +

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436673
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Stencil masks, based on 150mm Si-wafers, with large diameter membrane fields have been fabricated for use in an ion projection lithography (IPL) tool. With a current membrane diameter of 126mm, the control of pattern placement is one of the major challenges. As the masks are produced by a wafer flow process, pattern distortions after membrane etch, caused by stiffness changes, have to be controlled. Additionally, stress inhomogenity resulting from SOI wafer blank fabrication, boron implantation and other process steps has to be addressed. These parameters will be discussed on a global and local scale. Results by both, experiments and FE modeling simulations are presented.

Citation Download Citation

Frank-Michael Kamm, Albrecht Ehrmann, Thomas Struck, Karl Kragler, Joerg Butschke, Florian Letzkus, Reinhard Springer, and Ernst Haugeneder "Progress in placement control for ion beam stencil mask technology", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436673

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