Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs

Se-Jin Choi; Yong-Jun Choi; Yang-Sook Kim; Sang-Don Kim; Deog-Bae Kim; Jae-Hyun Kim; Cha-Won Koh; Geunsu Lee; Jae Chang Jung; Ki-Ho Baik

doi:10.1117/12.436828

24 August 2001 Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs

Se-Jin Choi, Yong-Jun Choi, Yang-Sook Kim, Sang-Don Kim, Deog-Bae Kim, Jae-Hyun Kim, Cha-Won Koh, Geunsu Lee, Jae Chang Jung, Ki-Ho Baik

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436828
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The effect of mixed PAGs on the performance of ArF photoresists based on cycloolefin/maleic anhydride (COMA) copolymers were investigated. Several different PAGs were prepared according to the size of photogenerated acid moiety and structure of light sensitive chromophore, and the impact of PAG property on lithographic performance was investigated in terms of the acid size, acid generation efficiency, and hydrophobicity of PAG. The diffusion according to the size of generated acid and hydrophobicity of PAG were found to be the most profound factors of the pattern profile and line edge roughness (LER) of developed resist pattern. Resolution capability as well as PED stability can be improved though adjustment of acid size, PAG hydrophobicity. Additionally, profile difference between dark and bright field according to mask type can be suppressed by the use of PAG with lower acid generation efficiency. However, lithographic performance, such as LER, pattern profile, and PED stability show the dissimilar trend with acid size and hydrophobicity of PAG. Thus, when PAG mixture is employed in a photoresist formulation, it is observed that both pattern profile and LER were improved simultaneously, which has been difficult to achieve for previously reported OCMA- based ArF resists.

Citation Download Citation

Se-Jin Choi, Yong-Jun Choi, Yang-Sook Kim, Sang-Don Kim, Deog-Bae Kim, Jae-Hyun Kim, Cha-Won Koh, Geunsu Lee, Jae Chang Jung, and Ki-Ho Baik "Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436828

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