Achieving low-wavefront specifications for DUV lithography: impact of residual stress in HPFS fused silica

Julie L. Ladison; Joseph F. Ellison; Douglas C. Allan; David R. Fladd; Andrew W Fanning; Richard Priestley

doi:10.1117/12.435680

14 September 2001 Achieving low-wavefront specifications for DUV lithography: impact of residual stress in HPFS fused silica

Julie L. Ladison, Joseph F. Ellison, Douglas C. Allan, David R. Fladd, Andrew W Fanning, Richard Priestley

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435680
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

As optical lithographers push to extend optical lithography technologies to create smaller features with higher NA, lower k₁ values and shorter wavelengths, transmitted wavefront specifications for HPFS^R fused silica blanks continue to tighten. HPFS^R fused silica blanks are typically certified for acceptance using an interferometer operating at a wavelength of 632.8 nm. As the market demands increasingly tighter homogeneity specifications, it has become critical to understand the sources of variation in wavefront measurements. Corning has recently initiated a study to identify those sources of variation. One glass attribute being studied is the impact of residual stress on the wavefront. It is known that residual stresses can alter the refractive index of fused silica. To obtain the residual stress measurements, birefringence measurements were obtained at 632.8 nm for comparison to wavefront measurements at 632.8 nm. The relationship between residual birefringence and transmitted wavefront measurements, at 632.8 nm on Corning HPFS^R fused silica blanks, is explored in this paper.

Citation Download Citation

Julie L. Ladison, Joseph F. Ellison, Douglas C. Allan, David R. Fladd, Andrew W Fanning, and Richard Priestley "Achieving low-wavefront specifications for DUV lithography: impact of residual stress in HPFS fused silica", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435680

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