130-nm node mask development

Jan M. Chabala; Suzanne Weaver; David W. Alexander; Maiying Lu; Nam-Wook Kim; Damon M. Cole

doi:10.1117/12.425102

9 April 2001 130-nm node mask development

Jan M. Chabala, Suzanne Weaver, David W. Alexander, Maiying Lu, Nam-Wook Kim, Damon M. Cole

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425102
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small- pattern fidelity is one of the most challenging tasks in maskmaking. The research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD) uniformity, CD linearity, small- feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES^TM 5500 systems, all experiments are performed with ZEP 7000 resist, 10 (mu) C/cm² dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). These results are instructive for improved 130 nm node lithography and 180 nm node productivity.

Citation Download Citation

Jan M. Chabala, Suzanne Weaver, David W. Alexander, Maiying Lu, Nam-Wook Kim, and Damon M. Cole "130-nm node mask development", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425102

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