Paper
23 March 2001 Emissivity-corrected infrared thermal pulse measurement on microscopic semiconductor targets
Grant C. Albright, James A. Stump, Chunpang Li, Herbert Kaplan
Author Affiliations +
Abstract
The precision measurement and recording of high speed thermal transients on microscopic targets is critical to the manufacturing of semiconductors and other electronic devices as thermal budgets become over more demanding and devices become more compact and powerful. This paper describes the fully automated emissivity- corrected measurement of high speed thermal pulses at speeds up to 200 KHz representing the newest innovation in almost 25 years of thermal microimager evolution. Sample thermal images and time-based thermal scans are presented demonstrating the use of this transient measurement capability in the detection and identification of design and process defects. The documentation of a measurement spatial resolution of better than 3 micrometers is also reviewed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grant C. Albright, James A. Stump, Chunpang Li, and Herbert Kaplan "Emissivity-corrected infrared thermal pulse measurement on microscopic semiconductor targets", Proc. SPIE 4360, Thermosense XXIII, (23 March 2001); https://doi.org/10.1117/12.420983
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Temperature metrology

Semiconductors

Thermography

Cameras

Infrared radiation

Image resolution

Infrared imaging

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