Paper
5 April 2001 Design and coupled-effect simulations of CMOS micro gas sensors built on SOI thin membranes
Chih-Cheng Lu, Florin Udrea, Julian W. Gardner, D. Setiadi, T. Dogaru, T. H. Tsai, James A. Covington
Author Affiliations +
Proceedings Volume 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001; (2001) https://doi.org/10.1117/12.425340
Event: Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, 2001, Cannes-Mandelieu, France
Abstract
This paper describes coupled-effect simulations of smart micro gas-sensors based on standard BiCMOS technology. The smart sensor features very low power consumption, high sensitivity and potential low fabrication cost achieved through full CMOS integration. For the first time the micro heaters are made of active CMOS elements (i.e. MOSFET transistors) and embedded in a thin SOI membrane consisting of Si and SiO2 thin layers. Micro gas-sensors such as chemoresistive, microcalorimeteric and Pd/polymer gate FET sensors can be made using this technology. Full numerical analyses including 3D electro- thermo-mechanical simulations, in particular stress and deflection studies on the SOI membranes are presented. The transducer circuit design and the post-CMOS fabrication process, which includes single sided back-etching, are also reported.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-Cheng Lu, Florin Udrea, Julian W. Gardner, D. Setiadi, T. Dogaru, T. H. Tsai, and James A. Covington "Design and coupled-effect simulations of CMOS micro gas sensors built on SOI thin membranes", Proc. SPIE 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, (5 April 2001); https://doi.org/10.1117/12.425340
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Field effect transistors

Silicon

Sensors

Oxides

Gas sensors

Standards development

CMOS technology

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