Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3

Yoshinori Nakayama; Hiroshi Watanabe; Shinji Tsuboi; Hajime Aoyama; Mizunori Ezaki; Yasuji Matsui; Tetsuo Morosawa; Masatoshi Oda

doi:10.1117/12.438364

5 September 2001 Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3

Yoshinori Nakayama, Hiroshi Watanabe, Shinji Tsuboi, Hajime Aoyama, Mizunori Ezaki, Yasuji Matsui, Tetsuo Morosawa, Masatoshi Oda

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438364
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

Key issues of x-ray mask fabrication are EB mask writer and writing process on thin membrane. This paper shows precise x-ray mask writing technology using 100-kV EB writer on x- ray membrane mask. After several improvements of writing process including non-deformation mask holding and precise temperature control, absolute image placement accuracy within 10nm was obtained for giga-bit level ULSI pattern. Also the delineation characteristics of membrane mask writing using high-energy electron-beam including proximity effect and fogging effect were evaluated. Then accurate critical dimension control within 8 nm was achieved for such high density ULSI patterns. These good results satisfied the mask precision requirements for 100-nm node generation and below. So we fabricated precise x-ray masks having fine patterns of sub 100-nm node device for evaluation of advanced x-ray stepper.

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Yoshinori Nakayama, Hiroshi Watanabe, Shinji Tsuboi, Hajime Aoyama, Mizunori Ezaki, Yasuji Matsui, Tetsuo Morosawa, and Masatoshi Oda "Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438364

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