Resonant intersubband transitions of holes in uniaxially stressed p-Ge

A. A. Abramov; V. I. Akimov; A. T. Dalakyan; Victor N. Tulupenko; D. A. Firsov; Vladimir I. Gavrilenko; V. M. Bondar; V. N. Poroshin

doi:10.1117/12.425495

10 April 2001 Resonant intersubband transitions of holes in uniaxially stressed p-Ge

A. A. Abramov, V. I. Akimov, A. T. Dalakyan, Victor N. Tulupenko, D. A. Firsov, Vladimir I. Gavrilenko, V. M. Bondar, V. N. Poroshin

Author Affiliations +

Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425495
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

Probabilities of intra- and intersubband acoustic scattering of holes in uniaxially stressed p-Ge in electric field are calculated. Perturbation of the free hole states by impurity potential is taken into account. Perturbation has a resonant nature and takes maximum values in the region of hole energy around energy position of quasi-local impurity state. Probabilities of acoustic and impurity scattering increase abruptly in that region. Calculated probabilities are used for Monte-Carlo simulation of hole motion in uniaxially stressed p-Ge in strong electric field. The essential influence of intersubband hole transitions with partaking of high-frequency acoustic phonons on the electric current is shown. Comparisons of theoretically obtained current-pressure dependences and experimental ones is performed.

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A. A. Abramov, V. I. Akimov, A. T. Dalakyan, Victor N. Tulupenko, D. A. Firsov, Vladimir I. Gavrilenko, V. M. Bondar, and V. N. Poroshin "Resonant intersubband transitions of holes in uniaxially stressed p-Ge", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425495

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