Microstrip and suspended substrate GaAs bias-T

A. D. Gopalaswamy; Utpal Das

doi:10.1117/12.441316

25 September 2001 Microstrip and suspended substrate GaAs bias-T

A. D. Gopalaswamy, Utpal Das

Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441316
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India

Abstract

For photodiode bias-Ts in optoelectronic ICs > 20dB isolation is essential at 2.5-10 GHz for the photodiode to work at both 2.5 and 10 Gbit/s. Designed micro strip and suspended substrate GaAs bias-Ts show 30-140 dB isolation and measured values are approximately 30 dB in the 2.5-10 Ghz range.

Citation Download Citation

A. D. Gopalaswamy and Utpal Das "Microstrip and suspended substrate GaAs bias-T", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441316

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