Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target

Jian Sun; JiaDa Wu; Hao Ling; Wei Shi; Zhifeng Ying; Xunmin Ding; Zhuying Zhou; Fuming Li

doi:10.1117/12.456843

25 February 2002 Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target

Jian Sun, JiaDa Wu, Hao Ling, Wei Shi, Zhifeng Ying, Xunmin Ding, Zhuying Zhou, Fuming Li

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456843
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

We demonstrated the feasibility of the growth of GaN thin films from polycrystalline GaAs using reactive pulsed laser deposition. The films were grown on Si (100) substrates at temperatures lower than 80 degree(s)C. A bulk of polycrystalline GaAs was used as a target. Reactive nitrogen plasma was provided by electron cyclotron resonance (ECR) microwave discharge in pure nitrogen gas to assist the film growth. Composition analysis showed that the grown films are slightly N-rich, and arsenic can hardly be detected. A strong absorption peak corresponding to Ga-N stretching vibration in the hexagonal-type GaN crystals is clearly resolved from the IR absorption spectrum. The films exhibit transparency in the visible and near-IR regions. The band gap of the films was determined to be about 3.4eV. when excited by 325-nm light at 10.2 K, the grown films luminesce in the blue region.

Citation Download Citation

Jian Sun, JiaDa Wu, Hao Ling, Wei Shi, Zhifeng Ying, Xunmin Ding, Zhuying Zhou, and Fuming Li "Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456843

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