Paper
11 March 2002 ArF (193-nm) alternating aperture PSM quartz defect repair and printability for 100-nm node
Jerry Xiaoming Chen, John Riddick, Matt J. Lamantia, Azeddine Zerrade, Robert K. Henderson, Greg P. Hughes, Cyrus Emil Tabery, Khoi A. Phan, Chris A. Spence, Amy A. Winder, William A. Stanton, Eugene A. Delarosa, John G. Maltabes, Cecilia E. Philbin, Lloyd C. Litt, Anthony Vacca, Scott Pomeroy
Author Affiliations +
Abstract
Repair and printability of 193nm alternating aperture phase shift masks have been studied in detail in an effort to understand the overall production capability of these masks for wafer production at the 100nm node and below.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry Xiaoming Chen, John Riddick, Matt J. Lamantia, Azeddine Zerrade, Robert K. Henderson, Greg P. Hughes, Cyrus Emil Tabery, Khoi A. Phan, Chris A. Spence, Amy A. Winder, William A. Stanton, Eugene A. Delarosa, John G. Maltabes, Cecilia E. Philbin, Lloyd C. Litt, Anthony Vacca, and Scott Pomeroy "ArF (193-nm) alternating aperture PSM quartz defect repair and printability for 100-nm node", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458362
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Cited by 2 scholarly publications.
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KEYWORDS
Quartz

Photomasks

Semiconducting wafers

Atomic force microscopy

Etching

Scanning electron microscopy

Ions

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