OPFET-LAOS: a new optoelectronic integrated device for light amplifying optical switch

Satyabrata Jit; B. B. Pal

doi:10.1117/12.444952

19 October 2001 OPFET-LAOS: a new opto-electronic integrated device for light-amplifying optical switch

Satyabrata Jit, B. B. Pal

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444952
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

A new optoelectronic integrated device composed of an Optical Field Effect Transistor (OPFET) in series with a double heterojunction light emitting diode (LED) or a laser liode (LD) which can be used as a Light Amplifying Optical Switch (LAOS), is presented in this paper. We shall call this device as OPFET-LAOS since it is a new one in its category. Theoretical investigation has been carried out to develop the I-V characteristic of the proposed device. It is shown theoretically that the device changes its state form a low current (i.e. high impedance) state to a high current (i.e. low impedance) state through a region of negative differential resistance (NDR) when the applied voltage exceeds a certain limit, called the breakover voltage. Thus, the I-V characteristic of the device is similar to that of an existing LAOS composed of a heterojunction phototransistor (HPT) in series with a double heterojunction LED (or LD).

Citation Download Citation

Satyabrata Jit and B. B. Pal "OPFET-LAOS: a new opto-electronic integrated device for light-amplifying optical switch", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444952

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KEYWORDS

Light emitting diodes

Heterojunctions

Dielectrophoresis

Field effect transistors

Optical switching

Optoelectronic devices

Optoelectronics

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