Transient responding characteristics of semiconductor bistable amplifier

Tingwan Wu; Zhaosheng Zhu

doi:10.1117/12.444939

19 October 2001 Transient responding characteristics of semiconductor bistable amplifier

Tingwan Wu, Zhaosheng Zhu

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444939
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this paper we present the results of theoretical analysis and numerical analogue on the transient characteristics of a semiconductor system responding to the incident signal field, especially for the situations in which the system is with lasing effect and display a novel increasing absorption bistable state. The results appear some different features with that of other known bistable device and lasers. These results may be available to a class of excitonic bistable lasing systems.

Citation Download Citation

Tingwan Wu and Zhaosheng Zhu "Transient responding characteristics of semiconductor bistable amplifier", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444939

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