Carrier dynamics in self-assembled InAs quantum dots

Xinhai Zhang; Jian Rong Dong; Soo-Jin Chua

doi:10.1117/12.446588

29 October 2001 Carrier dynamics in self-assembled InAs quantum dots

Xinhai Zhang, Jian Rong Dong, Soo-Jin Chua

Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446588
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

Photoluminescence)PL) spectra and time resolved PL form self-assembled Inas/GaAs quantum dots (QDS) grown by metal organic chemical vapor deposition are studied. A reduction in the emission linewidth with increasing temperature was observed that the variation of PL peak energy with temperature does not follow Varshni's equation. These anomalous behaviors of PL can be explained in terms of thermal redistribution of carriers. It was also found that the PL decay time increases with photon wavelength, which is due to the carrier transfer between laterally coupled QDs.

Citation Download Citation

Xinhai Zhang, Jian Rong Dong, and Soo-Jin Chua "Carrier dynamics in self-assembled InAs quantum dots", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446588

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