Polysilicon micromachined switch

Zhengyuan Zhang; Zhiyu Wen; Shilu Xu; Kaicheng Li; Zhengfan Zhang; Shanglian Huang

doi:10.1117/12.444756

15 October 2001 Polysilicon micromachined switch

Zhengyuan Zhang, Zhiyu Wen, Shilu Xu, Kaicheng Li, Zhengfan Zhang, Shanglian Huang

Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444756
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

LPCVD SiO₂ and polysilicon being used as sacrificial layer and cantilever respectively, a polysilicon micromachined RF switch has been fabricated. In the process the stress of polysilicon is released to prevent polysilicon membrane from bending. The switch offers the potential for building a new fully monolithic integrated RF MEMS for radar and communications applications.

Citation Download Citation

Zhengyuan Zhang, Zhiyu Wen, Shilu Xu, Kaicheng Li, Zhengfan Zhang, and Shanglian Huang "Polysilicon micromachined switch", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444756

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