Surface treatment and passivation of III-nitride LEDs

Ching-Ting M. Lee; Yow-Jon Lin

doi:10.1117/12.469206

6 June 2002 Surface treatment and passivation of III-nitride LEDs

Ching-Ting M. Lee, Yow-Jon Lin

Proceedings Volume 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI; (2002) https://doi.org/10.1117/12.469206
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH₄)₂S_x solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the NH₄)₂S_x solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH₄)₂S_x-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH₄)₂S_x treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH₄)₂S_x- treated III-nitride layers was investigated. The function of the (NH₄)₂S_x treatment was analyzed.

Citation Download Citation

Ching-Ting M. Lee and Yow-Jon Lin "Surface treatment and passivation of III-nitride LEDs", Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); https://doi.org/10.1117/12.469206

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