Paper
11 June 2002 Terahertz emission from magnetoplasma oscillations in semiconductors
James N. Heyman, H. Wrage, C. Lind, D. Hebert, P Neocleous, P. A. Crowell, T. Mueller, Karl Unterrainer
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Abstract
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We have studied THz emission from bulk InAs and GaAs and from GaAs/AlGaAs quantum wells as a function of magnetic field. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-Sapphire laser, and we recorded the THz emission spectrum and the integrated THz power as a function of magnetic field and temperature. In bulk samples the emitted radiation is produced by coupled cyclotron-plasma oscillations: we model THz emission from n-GaAs as magneto-plasma oscillations in a 3-D electron gas. THz emission from a modulation-doped parabolic quantum well is described in terms of coupled intersubband-cyclotron motion. A model including both 3-D plasma oscillations and a 2-D electron gas in a surface accumulation layer is required to describe THz emission from InAs in a magnetic field.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James N. Heyman, H. Wrage, C. Lind, D. Hebert, P Neocleous, P. A. Crowell, T. Mueller, and Karl Unterrainer "Terahertz emission from magnetoplasma oscillations in semiconductors", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470418
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Cited by 2 scholarly publications.
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KEYWORDS
Terahertz radiation

Magnetism

Indium arsenide

Plasma

Quantum wells

Motion models

Gallium arsenide

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