Fabrication control during AlAs oxidation of the VCSELs via optical probing technique of AlAs lateral oxidation (OPTALO)

Akira Sakamoto; Hideo Nakayama; Takeshi Nakamura

doi:10.1117/12.469236

4 June 2002 Fabrication control during AlAs oxidation of the VCSELs via optical probing technique of AlAs lateral oxidation (OPTALO)

Akira Sakamoto, Hideo Nakayama, Takeshi Nakamura

Author Affiliations +

Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469236
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

To control oxidation process precisely is important to fabricate small-aperture oxide-VCSELs with high reproducibility and uniformity. A real-time observation of the oxidation through the CCD camera was previously reported. However, it is difficult to observe the oxidation rate of a production-scale VCSEL wafer in a chamber by IR microscope. To measure simply and to control precisely the depth of AlAs-oxidation, the oxidation was in-situ monitored via optical probing technique for AlAs lateral oxidation (OPTALO). The substrates of the 780-nm oxide VCSELs were prepared with dry-etched 20-micron stripes filled over 7mm square area. The trenches of the stripes grooved periodically were 10 micron wide and 5 micron deep, which enables AlAs layer to be oxidized laterally. An optical fiber was placed over the substrate to illuminate using a halogen lamp and to collect the reflection to a spectrometer. Due to the spectral difference between the oxidized and non-oxidized area, the reflectivity linearly changes during the oxidation according with the ratio of the oxidation and non-oxidation area. The side-lobes of the spectra were averaged as the OPTALO signal, then the transients of the signals showed good agreement with transients of the depth of AlAs lateral oxidation.

Citation Download Citation

Akira Sakamoto, Hideo Nakayama, and Takeshi Nakamura "Fabrication control during AlAs oxidation of the VCSELs via optical probing technique of AlAs lateral oxidation (OPTALO)", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); https://doi.org/10.1117/12.469236

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