Mechanical modeling of the reticle and chuck for EUV lithography

Carl J. Martin; Andrew R. Mikkelson; Richard O. Tejeda; Roxann L. Engelstad; Edward G. Lovell; Kenneth L. Blaedel; Andre A. Claudet

doi:10.1117/12.472290

1 July 2002 Mechanical modeling of the reticle and chuck for EUV lithography

Carl J. Martin, Andrew R. Mikkelson, Richard O. Tejeda, Roxann L. Engelstad, Edward G. Lovell, Kenneth L. Blaedel, Andre A. Claudet

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Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472290
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The reflective reticles used for extreme ultraviolet (EUV) lithography are subject to the stringent image placement and flatness requirements for 70 nm and smaller feature sizes. Stresses in the reflective multilayer coatings can produce substantial bowing of the reticle, and variations in the flatness and thickness of the reticle substrate, as well as entrapped debris particles, can contribute to flatness errors on the patterned surface after reticle chucking. Reticles will also be subjected to high stage accelerations and thermal loadings during exposure. The chuck in the exposure tool will be required to clamp the reticle flat, crush entrapped debris, remove absorbed EUV energy, and prevent slippage during stage accelerations. Additionally, the thermal and structural behavior of the chuck will influence the reticle response, and thus the reticle and chuck must be considered as a system. In order to determine reticle and chucking requirements, finite element models have been developed to analyze many of the key issues in the mechanical design of the reticle and chuck. The analyses are being used to support the development of reticle and chuck standards for EUV lithography.

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Carl J. Martin, Andrew R. Mikkelson, Richard O. Tejeda, Roxann L. Engelstad, Edward G. Lovell, Kenneth L. Blaedel, and Andre A. Claudet "Mechanical modeling of the reticle and chuck for EUV lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472290

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