Molecular resists with t-butyl cholate as a dendrimer core

Jin-Baek Kim; Tae Hwan Oh; Young-Gil Kwon

doi:10.1117/12.474255

24 July 2002 Molecular resists with t-butyl cholate as a dendrimer core

Jin-Baek Kim, Tae Hwan Oh, Young-Gil Kwon

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474255
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Several molecular resist materials were synthesized for 193 nm photoresists. They include cholate derivatives as dendrimer cores and ester groups as peripheral parts. Cholate derivatives provide etch resistance and peripheral parts give coatability and acid-labile polarity change. They were synthesized using an acetal-protected anhydride derivative of 2,2-bis(hydroxymethyl)proponic acid as an acylating reagent. These dendrimer materials were grown to the 1st generation. t-Butoxy esters are attached to the end of peripheral parts for positive-tone resists. These molecular resist materials were coated well to the silicon wafer and show good sensitivity and etch resistance.

Citation Download Citation

Jin-Baek Kim, Tae Hwan Oh, and Young-Gil Kwon "Molecular resists with t-butyl cholate as a dendrimer core", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474255

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