Is it possible to improve MEEF?

Seok-Hwan Oh; Hyoungkook Kim; Dae-Joung Kim; Young-Seok Kim; Chun-Suk Suh; Yong-Sun Koh; Chang-Lyong Song

doi:10.1117/12.474522

30 July 2002 Is it possible to improve MEEF?

Seok-Hwan Oh, Hyoungkook Kim, Dae-Joung Kim, Young-Seok Kim, Chun-Suk Suh, Yong-Sun Koh, Chang-Lyong Song

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474522
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

As the design rule of device has shrunken, obtaining a feasible process window at low k1 factor in photolithography is the major concerning in order to shorten the total period from development to the mass production of devices. In this low k1 factor region, a tiny CD variation on mask might be increased abruptly on the wafer. In particular, such variation so called MEEF (Mask Error Enhancement Factor) is closely related with various types of process parameter. In this paper, we reviewed optimized process condition to minimize MEEF and defined uDoF (Usable Depth of Focus) considering a correlation between MEEF and DoF (Depth of Focus).

Citation Download Citation

Seok-Hwan Oh, Hyoungkook Kim, Dae-Joung Kim, Young-Seok Kim, Chun-Suk Suh, Yong-Sun Koh, and Chang-Lyong Song "Is it possible to improve MEEF?", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474522

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