Wafer flatness for CD control in photolithography

Tadahito Fujisawa; Masafumi Asano; T. Sutani; Soichi Inoue; Hiroaki Yamada; Junji Sugamoto; Katsuya Okumura; Tsuneyuki Hagiwara; Satoshi Oka

doi:10.1117/12.474630

30 July 2002 Analysis of wafer flatness for CD control in photolithography

Tadahito Fujisawa, Masafumi Asano, T. Sutani, Soichi Inoue, Hiroaki Yamada, Junji Sugamoto, Katsuya Okumura, Tsuneyuki Hagiwara, Satoshi Oka

Author Affiliations +

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474630
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Wafer-induced focus error is investigated for analysis of our focus budget in photolithography. Using a newly developed wafer monitor, NIWF-300 (Nikon Corp.), we directly measure surface flatness of the wafer placed on wafer holder with vacuum chuck. Single site polished Si wafers were evaluated with NIWF-300 and a conventional flatness monitor. We also investigated the effect of wafer holder using a ring-shape wafer support and a pin-shape wafer support. As a result, we found wafer shape measured in a freestanding condition does not represent surface flatness of the wafer on a holder. The holder has an impact on the wafer surface. The increase of adsorption ratio between wafer and holder improves the surface flatness.

Citation Download Citation

Tadahito Fujisawa, Masafumi Asano, T. Sutani, Soichi Inoue, Hiroaki Yamada, Junji Sugamoto, Katsuya Okumura, Tsuneyuki Hagiwara, and Satoshi Oka "Analysis of wafer flatness for CD control in photolithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474630

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