Influence of target temperature on sputter deposited Ti-Ni-Cu and Ti-Ni-Pd shape memory alloys

Kotekar Panduranga Mohanchandra; Ken K. Ho; Gregory Paul Carman

doi:10.1117/12.474978

11 July 2002 Influence of target temperature on sputter-deposited Ti-Ni-Cu and Ti-Ni-Pd shape memory alloys

Kotekar Panduranga Mohanchandra, Ken K. Ho, Gregory Paul Carman

Proceedings Volume 4699, Smart Structures and Materials 2002: Active Materials: Behavior and Mechanics; (2002) https://doi.org/10.1117/12.474978
Event: SPIE's 9th Annual International Symposium on Smart Structures and Materials, 2002, San Diego, California, United States

Abstract

Ti-Ni-Cu and Ti-Ni-Pd films are deposited on Si < 100 > substrate by d.c. magnetron sputtering technique. In this paper, the influence of target temperature on the properties of the film is discussed. The target temperature transitions from a low temperature value to a high temperature value during sputtering. As grown Ti-Ni-Cu films are amorphous and are crystallized by heating at 500 degreesC for 20 minutes in situ prior to removal from the sputtering system whereas, as grown Ti-Ni-Pd films are crystallized at 550 degrees C for one hour. DSC and electrical resistivity measurements are used to determine the transformation temperature whereas, TEM and XRD are used for structural characterization and composition of the film is determined by using EDAX. We find that the transformation temperatures and the shape memory characteristics are strongly influenced by target temperature. The films show more uniform stoichiometry if the target is hot during deposition.

Citation Download Citation

Kotekar Panduranga Mohanchandra, Ken K. Ho, and Gregory Paul Carman "Influence of target temperature on sputter-deposited Ti-Ni-Cu and Ti-Ni-Pd shape memory alloys", Proc. SPIE 4699, Smart Structures and Materials 2002: Active Materials: Behavior and Mechanics, (11 July 2002); https://doi.org/10.1117/12.474978

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