Electrochemical CdTe deposition for HgCdTe surface passivation

Jong-Hwa Choi; Hee Chul Lee

doi:10.1117/12.453820

5 December 2002 Electrochemical CdTe deposition for HgCdTe surface passivation

Jong-Hwa Choi, Hee Chul Lee

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.453820
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

CdTe films have been electrodeposited on HgCdTe from ethylene glycol based electrolyte containing 50 mM CdSO₄, 10 mM K₂TeO₃ and 0.1 M HClO₄. Deposition potential range with respect to a saturated calomel reference electrode was determined through cyclic voltammetry technique. RBS data showed that films deposited at potential range between -0.4 to -0.5 V have nearly stoichiometric Cd/Te atomic ratio. At the same time, highly oriented and smoother films were obtained at potential range were stoichiometric CdTe films were electrodeposited through nitrogen bubbling process. By adopting constant potential deposition technique could be obtained between electrodeposited CdTe and HgCdTe substrate showing high frequency capacitance-voltage (C-V) characteristics. Electrodeposited CdTe film can be used as a passivant for LWIR HgCdTe photodiodes.

Citation Download Citation

Jong-Hwa Choi and Hee Chul Lee "Electrochemical CdTe deposition for HgCdTe surface passivation", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.453820

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