Optical Linewidth Measurement On Patterned Metal Layers

D. Nyyssonen

doi:10.1117/12.943049

15 October 1984 Optical Linewidth Measurement On Patterned Metal Layers

D. Nyyssonen

Proceedings Volume 0480, Integrated Circuit Metrology II; (1984) https://doi.org/10.1117/12.943049
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

In a previous paper, 1 a waveguide model was developed for the imaging of micrometer-sized lines patterneu in thick layers of dielectric materials (silicon dioxide) with application to linewidth measurement on integrated-circuit wafers. This paper describes the extension of this work to metals characterized by their complex index of refraction, n + iK, as well as the inclusion of a sublayer such as a silicon dioxide insulating layer. This extension allows the modeling of optical imaging and linewidth measurement on metal-on-silicon (MOS) structures. It is shown that the image structure for metals at and near focus is different from that for dielectrics. Thick and thin layer (less than 200 nm) imaging is compared. Experimental image profiles of metal lines at and near focus are also shown. The experimental data were obtained from a bright-field microscope using a laser source (530 nm) and controlled spatial coherence.

Citation Download Citation

D. Nyyssonen "Optical Linewidth Measurement On Patterned Metal Layers", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); https://doi.org/10.1117/12.943049

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