Fogging effect consideration in mask process at 50-KeV e-beam systems

Seung-Hune Yang; Yo-Han Choi; Jong-Rak Park; Yong-Hoon Kim; Sung-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn

doi:10.1117/12.468100

27 December 2002 Fogging Effect Consideration in Mask Process at 50 KeV E-Beam Systems

Seung-Hune Yang, Yo-Han Choi, Jong-Rak Park, Yong-Hoon Kim, Sung-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468100
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

To achieve higher resolution and critical dimension (CD) accuracy in mask fabrication, 50KeV E-beam systems are used widely. However, as a high acceleration system is adapted, the degree of fogging effect caused by multi-scattering electrons becomes more serious. Although considerable efforts have been made, fogging effect cannot be removed perfectly, therefore several compensation techniques are applied instead. Fogging effect not only deteriorates CD uniformity but also makes mean to target (MTT) control difficult. Moreover, Fogging effect causes proximity effect correction (PEC) error according to PEC methods such as dose modulation type usually used in variable shaped beam (VSB) system and GHOST type commonly used in Gaussian beam system. In this paper, we investigated the fogging effect under the various exposure conditions at raster scan Gaussian beam system and VSB system experimentally and analytically.

Citation Download Citation

Seung-Hune Yang, Yo-Han Choi, Jong-Rak Park, Yong-Hoon Kim, Sung-Woon Choi, Hee-Sun Yoon, and Jung-Min Sohn "Fogging Effect Consideration in Mask Process at 50 KeV E-Beam Systems", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468100

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