Interferometric assessment of laser-induced damage to semiconductors

James L. Blackshire; Andrew Zakel; Shekhar Guha

doi:10.1117/12.474855

30 May 2003 Interferometric assessment of laser-induced damage to semiconductors

James L. Blackshire, Andrew Zakel, Shekhar Guha

Proceedings Volume 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization; (2003) https://doi.org/10.1117/12.474855
Event: XXXIV Annual Symposium on Optical Materials for High Power Lasers: Boulder Damage Symposium, 2002, Boulder, CO, United States

Abstract

It is important to determine the onset of damage as well as the extent of the damage area when materials are illuminated by intense laser radiation. In this work, an optical interferometric technique was used to assess laser-induced damage in semiconductor materials based on the three-dimensional, topographic characteristics of the damage site. Both antireflection coated and uncoated materials were evaluated for variations of fluence level, focused spot size, and laser repetition rate. The interferometric technique was non-contact and nondestructive in nature, providing a high-resolution capability of assessing damage levels on the surfaces of the materials.

Citation Download Citation

James L. Blackshire, Andrew Zakel, and Shekhar Guha "Interferometric assessment of laser-induced damage to semiconductors", Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); https://doi.org/10.1117/12.474855

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