High-power single-mode 915-nm InAlGaAs quantum-well lasers grown by MOCVD

Zuntu Xu; Wei Gao; Alan Nelson; Kejian Luo; Haiquan Yang; Lisen Cheng; Brad Siskavich; Zhiping Wang; Aland K. Chin

doi:10.1117/12.475751

3 July 2003 High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

Zuntu Xu, Wei Gao, Alan Nelson, Kejian Luo, Haiquan Yang, Lisen Cheng, Brad Siskavich, Zhiping Wang, Aland K. Chin

Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003) https://doi.org/10.1117/12.475751
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, lser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping srouce to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm², internal loss of 2.0 cm^-1 and internal quatnum efficiency of 93% were achieved. FOr 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au₈₀Sn₂₀ solder. Ten burned-in devices have now been aged at a constant current of 450 mA at 85°C for more than 1500 hours wihtout measurable degradation.

Citation Download Citation

Zuntu Xu, Wei Gao, Alan Nelson, Kejian Luo, Haiquan Yang, Lisen Cheng, Brad Siskavich, Zhiping Wang, and Aland K. Chin "High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); https://doi.org/10.1117/12.475751

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