Paper
11 June 2003 Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-μm picosecond laser diodes
G. B. Venus, A. Gubenko, Efim L. Portnoi, Eugene A. Avrutin, Jan-Michael Frahm, J. Kubler, S. Schelhase
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Abstract
We report short (30 - 35 ps), high energy (more than 100 pJ) optical pulses at 1.5 μm from Q-swithced laser diodes with multisection implantation-induced saturable absorbers. Dramatic improvement in pulse parameters over tandem lasers is due to suppression of spatial hole-burning and amplified spontaneous emission.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. B. Venus, A. Gubenko, Efim L. Portnoi, Eugene A. Avrutin, Jan-Michael Frahm, J. Kubler, and S. Schelhase "Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-μm picosecond laser diodes", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514375
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KEYWORDS
Picosecond phenomena

Pulsed laser operation

Diodes

High power lasers

Hole burning spectroscopy

Absorption

Nanostructures

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