Paper
16 June 2003 Shot noise and process window study for printing small contact holes using EUV lithography
Sang Hun Lee, Robert L. Bristol, John E. Bjorkholm
Author Affiliations +
Abstract
A theoretical analysis of the capability of Extreme Ultra-violet Lithography (EUVL) to print contacts in the range of 30-50 nm with acceptable yield is presented. We study the problem from the viewpoint of two issues: the effects of shot noise and the available process window. Shot noise is modeled as a simple statistical fluctuation of the number of photons absorbed in a given contact. The process windows for various size contacts are simulated for a representative 0.25-NA EUV tool. We find that EUVL should be able to print 30 nm contacts with a reasonable exposure latitude, and we also conclude that the effects of shot noise will not significantly decrease yield at this exposure latitude for a resist with a dose-to-clear value of ~5 mJ/cm2. A dose-to-clear value becomes ~2 mJ/cm2 for 50 nm contacts. In addition, a comparison at the same node shows that 50-nm contacts have a greater process window than 30-nm lines.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang Hun Lee, Robert L. Bristol, and John E. Bjorkholm "Shot noise and process window study for printing small contact holes using EUV lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484982
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CITATIONS
Cited by 6 scholarly publications and 1 patent.
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KEYWORDS
Printing

Extreme ultraviolet lithography

Photons

Lithography

Extreme ultraviolet

Electroluminescence

Failure analysis

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