Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li; Pushkara Rao Varanasi; Margaret C. Lawson; Ranee W. Kwong; Kuang-Jung Chen; Hiroshi Ito; Hoa D. Truong; Robert D. Allen; Masafumi Yamamoto; Eiichi Kobayashi; Mark Slezak

doi:10.1117/12.485100

12 June 2003 Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li, Pushkara Rao Varanasi, Margaret C. Lawson, Ranee W. Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa D. Truong, Robert D. Allen, Masafumi Yamamoto, Eiichi Kobayashi, Mark Slezak

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485100
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In an effort to design our next generation resist materials for sub-100nm lithography, we have introduced the hexafluoroisopropanol (HFA) functionality into the cyclic olefin (CO) polymer structure. It is found that the fluorine-containing HFA group not only helps reduce the 157nm optical density (O.D.) of the polymer and makes it suitable for 157nm application, but also dramatically improves the dissolution properties of the resulting CO polymer. Copolymers with a wide range (20-80%) of norbornene HFA (NBHFA) concentrations show little swelling behavior in aqueous base developer. The dissolution properties of the CO polymer could be further improved by combining the HFA and lactone structures in the CO polymers. This new version of CO polymers maintain a good etch resistance and excellent surface roughness after etch despite the fluorine content. Lithographic evaluation of resists based on these polymers (Cobra 5K) using a 193nm exposure tool (0.75 NA) reveals that Cobra 5K has a low post exposure bake (PEB) sensitivity (<0.5 nm/°C), good process window for both line/space (L/S) and contact holes patterns, and outstanding resolution capabilities especially for contacts application (<100nm).

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Wenjie Li, Pushkara Rao Varanasi, Margaret C. Lawson, Ranee W. Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa D. Truong, Robert D. Allen, Masafumi Yamamoto, Eiichi Kobayashi, and Mark Slezak "Rational design in cyclic olefin resists for sub-100-nm lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485100

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