Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas; Patrick Montgomery; Lloyd C. Litt; Will Conley; Sergei V. Postnikov; Wei Wu; Chi-Min Yuan; Marc Olivares; Kirk Strozewski; Russell L. Carter; James Vasek; David Smith; Eric L. Fanucchi; Vincent Wiaux; Geert Vandenberghe; Olivier Toublan; Arjan Verhappen; Jan Pieter Kuijten; Johannes van Wingerden; Bryan S. Kasprowicz; Jeffrey W. Tracy; Christopher J. Progler; Eugene Shiro; Igor Topouzov; Karl Wimmer; Bernard J. Roman

doi:10.1117/12.485498

26 June 2003 Process, design and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd C. Litt, Will Conley, Sergei V. Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell L. Carter, James Vasek, David Smith, Eric L. Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Pieter Kuijten, Johannes van Wingerden, Bryan S. Kasprowicz, Jeffrey W. Tracy, Christopher J. Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard J. Roman

Author Affiliations +

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485498
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The 65nm device generation will require steady improvements in lithography scanners, resists, reticles and OPC technology. 193nm high NA scanners and illumination can provide the desired dense feature resolution, but achieving the stringent overall 65nm logic product requirements necessitates a more coherent strategy of reticle, process, OPC, and design methods than was required for previous generations. This required integrated patterning solution strategy will have a fundamental impact on the relationship between design and process functions at the 65nm device node.

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Kevin Lucas, Patrick Montgomery, Lloyd C. Litt, Will Conley, Sergei V. Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell L. Carter, James Vasek, David Smith, Eric L. Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Pieter Kuijten, Johannes van Wingerden, Bryan S. Kasprowicz, Jeffrey W. Tracy, Christopher J. Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, and Bernard J. Roman "Process, design and optical proximity correction requirements for the 65nm device generation", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485498

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