Investigation of product design weaknesses using model-based OPC sensitivity analysis

Sergei V. Postnikov; Kevin Lucas; Cesar M. Garza; Karl Wimmer; Patrick LaCour; James C. Word

doi:10.1117/12.485263

10 July 2003 Investigation of product design weaknesses using model-based OPC sensitivity analysis

Sergei V. Postnikov, Kevin Lucas, Cesar M. Garza, Karl Wimmer, Patrick LaCour, James C. Word

Proceedings Volume 5042, Design and Process Integration for Microelectronic Manufacturing; (2003) https://doi.org/10.1117/12.485263
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

Due to the challenging CD control and resolution requirements of future device generations, a large number of complex lithography enhancement techniques are likely to be used for random logic devices. This increased design, reticle, process and OPC complexity must be handled flawlessly by process engineers in order to create working circuits. Additionally, the rapidly increasing cost and cycletime of advanced reticles has increased the urgency of obtaining reticles devoid of process limiting design or OPC errors. We have extended the capability of leading edge model-based OPC software to find and analyze process-limiting regions in real product designs. Specifically, we have implemented and verified software usefulness to find design-process limitations due to measured lens aberrations, as well as errors in focus, exposure or reticle CD control. We present results showing the applications and limitations of these new model-based analysis methods to discover process-design interaction errors in 90nm and 130nm patterning processes; and to propose design rule, process or OPC improvements to mitigate these errors.

Citation Download Citation

Sergei V. Postnikov, Kevin Lucas, Cesar M. Garza, Karl Wimmer, Patrick LaCour, and James C. Word "Investigation of product design weaknesses using model-based OPC sensitivity analysis", Proc. SPIE 5042, Design and Process Integration for Microelectronic Manufacturing, (10 July 2003); https://doi.org/10.1117/12.485263

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KEYWORDS

Optical proximity correction

Reticles

Error analysis

Semiconducting wafers

Model-based design

Optical lithography

Atrial fibrillation

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