Nondestructive nanomechanical imaging: cross-sectional ultrasonic force microscopy of integrated circuit test structures

L. Muthuswami; Y. Zheng; Robert E. Geer

doi:10.1117/12.483994

22 July 2003 Nondestructive nanomechanical imaging: cross-sectional ultrasonic force microscopy of integrated circuit test structures

L. Muthuswami, Y. Zheng, Robert E. Geer

Author Affiliations +

Proceedings Volume 5045, Testing, Reliability, and Application of Micro- and Nano-Material Systems; (2003) https://doi.org/10.1117/12.483994
Event: NDE for Health Monitoring and Diagnostics, 2003, San Diego, California, United States

Abstract

A novel cross-sectional characterization technique for nanomechanical profiling of low-k dielectrics has been developed based on ultrasonic force microscopy. So-called CS-UFM has been demonstrated on silicon-based, spin-on dielectrics (SOD) used for gap-fill in 0.15 μm trenches in an SiO₂ integrated circuit test structure. The SiO₂ trench walls were coated with a thin (~ 24 nm) plasma-enhanced, chemical vapor deposited (PECVD) silicon nitride layer. CS-UFM imaging clearly differentiated the SOD, SiO₂ and silicon nitride on the basis of elastic modulus. Variations in the elastic uniformity of the SOD and silicon nitride were observed. In addition, mechanical defects were identified within the SOD-filled trenches.

Citation Download Citation

L. Muthuswami, Y. Zheng, and Robert E. Geer "Nondestructive nanomechanical imaging: cross-sectional ultrasonic force microscopy of integrated circuit test structures", Proc. SPIE 5045, Testing, Reliability, and Application of Micro- and Nano-Material Systems, (22 July 2003); https://doi.org/10.1117/12.483994

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