Paper
14 October 2003 Theoretical modeling, design, fabrication, and testing of porous-silicon-based capacitive vapor sensor
J. Das, S. M. Hossain, S. Dey, H. Saha
Author Affiliations +
Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514574
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
Abstract
Capacitive type vapour sensor based on porous silicon (PS) transducer has been presented. Sensing mechanism of ambient vapour concentration by PS has been modeled with an effective medium approximation (EMA) considering adsorption-diffusion-condensation kinetics of vapour molecules inside the porous bulk. Optimized pore size and pore morphology for sensing of different vapours having widely different molecular weight and volume selectively have also been studied.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Das, S. M. Hossain, S. Dey, and H. Saha "Theoretical modeling, design, fabrication, and testing of porous-silicon-based capacitive vapor sensor", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); https://doi.org/10.1117/12.514574
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KEYWORDS
Picosecond phenomena

Dielectrics

Sensors

Silicon

Adsorption

Molecules

Diffusion

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