Development of LEEPL 6025 format mask blanks

Yuuki Aritsuka; Yukio Iimura; Morihisa Hoga; Hisatake Sano

doi:10.1117/12.504926

28 August 2003 Development of LEEPL 6025 format mask blanks

Yuuki Aritsuka, Yukio Iimura, Morihisa Hoga, Hisatake Sano

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504926
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

Low energy electron proximity projection lithography (LEEPL) has three types of mask formats. One of them, LEEPL 6025 square format, is so designed that electron-beam writers for photomasks can accommodate it. LEEPL 6025 square format blanks manufactured by three methods were evaluated in laying stress on cutting and bonding. The starting substrate was a 200-mm silicon-on-insulator wafer composed of a 2-μm-thick silicon layer, a 1-μm-thick SiO₂ layer, and a 725-μm-thick base silicon. Membrane wafers were made after dry etching of the backsides of the starting substrates. They were cut and bonded to frames. Ceramic SiC and a Si-base material were used for the frame. Soldering and other thermal methods were employed for bonding. The findings are: 1) No membranes were broken in cutting and bonding, 2) Chipping was observed after cutting, which requires some edge treatment like edge beveling, and 3) The flatness of the membrane wafer was reduced from 87 to 13 μm by bonding. In conclusion the 6025 square format blanks were successfully manufactured by three methods and evaluated in the first time.

Citation Download Citation

Yuuki Aritsuka, Yukio Iimura, Morihisa Hoga, and Hisatake Sano "Development of LEEPL 6025 format mask blanks", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504926

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