Single photoresist and double exposure (SPADE) for 0.18-um ROM and beyond

W.-H. Sheu

doi:10.1117/12.504382

28 August 2003 Single photoresist and double exposure (SPADE) for 0.18-um ROM and beyond

W.-H. Sheu

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504382
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

A double exposure technology, SPADE (Single Photo-resist And Double Exposure), utilizes the total accumulation resist energy exposing by different masks for pattern development. This "SPADE" process is a double exposure procedure that including resist coating, baking, first mask exposure, and second mask exposure and developer. This paper examines the process condition affecting the performance of ROM codes. We found that the first exposure with pre-code dense pattern is one of most critical parameters to affect the performance of the CD bias and resolution. Additionally, the second mask for real code pattern developer was also investigated in different mask CD size split. The final ROM code CD behavior is determined by both of the two masks. The results of these studies are discussed in term of mask type, exposure dosage, mask sizing and overlay sensitivity. Experimental results indicate that the iso-dense CD bias is smaller than traditional method. The energy latitude (E.L.%) also shows double than that of traditional ones.

Citation Download Citation

W.-H. Sheu "Single photoresist and double exposure (SPADE) for 0.18-um ROM and beyond", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504382

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