CTI distribution within a damaged CCD pixel having a notch structure

Hiroshi Tsunemi; Masami Miki; Emi Miyata; Junko Hiraga; Kazuhisa Miyaguchi

doi:10.1117/12.504309

20 January 2004 CTI distribution within a damaged CCD pixel having a notch structure

Hiroshi Tsunemi, Masami Miki, Emi Miyata, Junko Hiraga, Kazuhisa Miyaguchi

Proceedings Volume 5198, Hard X-Ray and Gamma-Ray Detector Physics V; (2004) https://doi.org/10.1117/12.504309
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Radiation hardness is one of the most important aspect of a charge coupled device (CCD) working in the space environment. A notch structure is employed so that a charge packet is confined in a notch region within a pixel. We report here the effect of the ’notch structure’ inside the CCD that is designed to be radiation hard. Using a proton beam, we confirmed that the notch structure improved the charge transfer inefficiency (CTI) by a factor of 3. We applied a mesh technique in the proton beam experiment on a CCD. The CCD employed has 1024×1024 pixels with a notch structure. The mesh technique enables us to confine the proton beam of about 600 keV to a circular region of 2 μm diameter within a 24μm pixel. The total proton fluence is 2 × 10⁹ protons/cm² before the mesh that corresponds to 100 protons for each hole. Some pixels are damaged in the notch region while others in the out-of-notch region. After the proton irradiation, we measured the CTI for each pixel using X-rays from ⁵⁵Fe. We found that the CTI of pixels damaged in the notch region is larger by a factor of 3 than that of pixels damaged in the out-of-notch region. We experimentally showed how the notch structure improved the CTI of the CCD.

Citation Download Citation

Hiroshi Tsunemi, Masami Miki, Emi Miyata, Junko Hiraga, and Kazuhisa Miyaguchi "CTI distribution within a damaged CCD pixel having a notch structure", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); https://doi.org/10.1117/12.504309

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