Flows for model-based layout correction of mask proximity effects

Nicolas B. Cobb; Wilhelm Maurer

doi:10.1117/12.518477

17 December 2003 Flows for model-based layout correction of mask proximity effects

Nicolas B. Cobb, Wilhelm Maurer

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518477
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

In this paper, we will investigate methods for adapting model-based OPC tools to do layout correction (biasing) for mask makgin proximity effects. (Mask Proximity Correction). We will discuss three aspects of this problem: (1) typical models to use for mask making; (2) calibration of the model using mask measurement data; (3) one-pass versus two-pass flows for correction of mask making proximity effects.

Citation Download Citation

Nicolas B. Cobb and Wilhelm Maurer "Flows for model-based layout correction of mask proximity effects", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518477

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