Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

David P. Mancini; Kathleen A. Gehoski; William J. Dauksher; Kevin J. Nordquist; Douglas J. Resnick; Philip Schumaker; Ian McMackin

doi:10.1117/12.518307

17 December 2003 Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

David P. Mancini, Kathleen A. Gehoski, William J. Dauksher, Kevin J. Nordquist, Douglas J. Resnick, Philip Schumaker, Ian McMackin

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Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518307
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Step and FLash Imprint Lithography (S-FIL) is one of several new methods of imprint lithography being actively developed. Since S-FIL is a 1X printing technique, fabrication of templates is especially critical. The requirement to produce defect-free pillars (needed for imprinting contacts on wafers) in a reliable and manufacturable manner only serves to compound this challenge. In this study, the feasibilty and methodology of fabricating templates having arrays of sub-80 nm pillars is demonstrated. This process involves the use of a Leica VB6 100 keV e-beam system to pattern ZEP 520A resist, followed by a series of chrome and quartz etches to arrive at the final all-quartz template. Wafer printing was done on 200 mm wafers using Molecular Imprints Inc., Imprio-100 system. Critical dimension of template contacts and pillars is shown as a function of e-beam dose. Results of the study have demonstrated that S-FIL templates made with sub-80 nm pillars can be used to reliably replicate 1:1 pitch contact hole arrays on wafers. Sidewall profiles of both template pillars and printed contacts were sloped somewhat, and resulted in an approximately a 20-30 nm bias between contact bottom (smaller) and top opening. Critical dimension uniformity of printed contact arrays within-field and from field-to-field was also explored. Within-field CD uniformity of contacts was found to be less than field-to-field CD uniformity, which was excellent. The feasibility of printing pillar array using S-FIL was also demonstrated. Arrays of pillars measuring 54 nm with a pitch of 1:3 were reliably printed.

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David P. Mancini, Kathleen A. Gehoski, William J. Dauksher, Kevin J. Nordquist, Douglas J. Resnick, Philip Schumaker, and Ian McMackin "Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518307

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KEYWORDS

Semiconducting wafers

Critical dimension metrology

Printing

Lithography

Etching

Photoresist processing

Cadmium

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